Part Number Hot Search : 
2SHA15TR 19371352 SSM2210P F315K6 MAX80 24S6R8 Q0565 AO4486
Product Description
Full Text Search
 

To Download MCH6613 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Ordering number : ENN6920
MCH6613
N-Channel and P-Channel Silicon MOSFETs
MCH6613
Ultrahigh-Speed Switching Applications
Features
*
Package Dimensions
unit : mm 2173A
[MCH6613]
0.25
* *
The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive.
0.3
0.15
4
2.1 1.6
5
6
0.25
32 0.65
2.0
0.07
1
(Bottom view)
0.85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 10 0.35 1.4
P-channel -30 10 --0.2 --0.8 0.8 150
Unit V V A A W C C
--55 to +150
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 150 220 2.9 3.7 6.4 3.7 5.2 12.8 30 10 10 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : FM
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM 52101 TS IM TA-3241 No.6920-1/6
MCH6613
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--100A VDS=-10V, ID=--50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-1mA, VGS=--1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=--10V, ID=--100mA VDS=-10V, VGS=--10V, ID=--100mA VDS=-10V, VGS=--10V, ID=--100mA IS=--100mA, VGS=0 --0.4 80 110 8 11 27 7.5 5.7 1.8 24 55 120 130 1.43 0.18 0.25 --0.83 --1.2 10.4 15.4 54 --30 --10 10 --1.4 V A A V mS pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit [N-channel]
VDD=15V VIN VIN ID=80mA RL=187.5
[P-channel]
VDD= --15V VIN VIN ID= --50mA RL=300
4V 0V
D
VOUT
0V --4V
D
VOUT
PW=10s D.C.1%
PW=10s D.C.1%
G
P.G 50 P.G
G
MCH6613
S
50
MCH6613
S
Electrical Connection
D1 G2 S2
(Top view) S1 G1 D2
No.6920-2/6
MCH6613
0.16 0.14 0.12 0.10 0.08
ID -- VDS
5V 2.
[Nch]
--0.10 --0.09 --0.08
ID -- VDS
0V
--3.5V
0V
[Pch]
3.0 V
4.0V
V 6.0
Drain Current, ID -- A
Drain Current, ID -- A
--0.07 --0.06 --0.05 --0.04 --0.03 --0.02
--6.0 V
--3 .
2
--4 .
3.5V
.0V
--2
.5
V
--2.0V
VGS=1.5V
0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VGS= --1.5V
--0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V
0.30
IT00029
ID -- VGS
Drain-to-Source Voltage, VDS -- V
--0.20 --0.18 --0.16
IT00077
[Nch]
ID -- VGS
[Pch]
Ta= --
0.25
25
C
VDS=10V
VDS= --10V
C
25 C
Drain Current, ID -- A
Drain Current, ID -- A
C
--0.12 --0.10 --0.08 --0.06 --0.04 --0.02
Ta= --
0.20
--0.14
75
25
25C
0.10
0.05
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030
0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
10 9
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
30
75
0.15
C
IT00078
[Nch] Ta=25C
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
8 7 6
25
20
80mA
5 4
15
ID= --30mA
10
--50mA
ID=40mA
3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
5
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
10
IT00031
Gate-to-Source Voltage, VGS -- V
100 7
IT00079
RDS(on) -- ID
[Nch] VGS=4V
RDS(on) -- ID
[Pch] VGS= --4V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5 3 2
5
Ta=75C
3
25C --25C
10 7 5 3 2
Ta=75C
--25C
25C
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00032
1.0 --0.01
2
3
5
7
--0.1
2
3
Drain Current, ID -- A
Drain Current, ID -- A
IT00080
No.6920-3/6
MCH6613
10
RDS(on) -- ID
[Nch] VGS=2.5V
100 7
RDS(on) -- ID
[Pch] VGS= --2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
5
Ta=75C 25C
3
--25C
Ta=75C 25C --25C
10 7 5 3 2
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 --0.01
2
3
5
7
--0.1
2
3
Drain Current, ID -- A
100 7
RDS(on) -- ID
Drain Current, ID -- A
1000 7
IT00081
[Nch] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) --
RDS(on) -- ID
[Pch] VGS= --1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
5 3 2
10 7 5 3 2
Ta=75C --25C 25C
100 7 5 3 2
Ta=75C --25C
2 3 5
25C
7 --0.001 2 3
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00034
10 --0.0001
Drain Current, ID -- A
7
Drain Current, ID -- A
18 16 14 12 10 8 6 4 2 --60
IT00082
RDS(on) -- Ta
[Nch]
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
6
5
4
3
A, 4.0V 40m S= I D= A, VG 80m I D=
5 =2. V GS
V
0 --3 I D=
mA
,
2. = -V GS
5V
-I D=
50m
= -GS A, V
4.0
V
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
--40
--20
Ambient Temperature, Ta -- C
1.0
yfs -- ID
IT00035
Ambient Temperature, Ta -- C
0
20
40
60
80
100
120
140
160
[Nch] Forward Transfer Admittance, yfs -- S VDS=10V
1.0 7 5 3 2
yfs -- ID
IT00083
[Pch] VDS= --10V
Forward Transfer Admittance, yfs -- S
7 5
25C
3 2
Ta= --
25C
75C
25C
0.1 7 5 3 2
0.1 7 5 3 2
2 Ta= --
5C
75C
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
0.01 --0.01
2
3
5
7
--0.1
2
3
Drain Current, ID -- A
Drain Current, ID -- A
IT00084
No.6920-4/6
MCH6613
1.0 7 5
IF -- VSD
[Nch] VGS=0
5 3
IF -- VSD
[Pch] VGS = 0
Forward Current, IF -- A
3 2
Forward Current, IF -- A
2
75 C
--0.1 7 5 3
Ta =
7 5 3 2
--2 5C
25
0.1
C
5C
25C
--0.7
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
--0.01 --0.5
--0.6
Ta= 7
2
--25 C
--0.8
--0.9
--1.0
--1.1 IT00085
Diode Forward Voltage, VSD -- V
1000 7
Diode Forward Voltage, VSD -- V
1000 7
SW Time -- ID
Switching Time, SW Time -- ns
3 2
Switching Time, SW Time -- ns
5
[Nch] VDD=15V VGS=4V
SW Time -- ID
[Pch] VDD= --15V VGS= --4V
5 3 2
td (off) tf
tr
td(off)
tf
100 7 5 3 2
100 7 5 3 2
tr td(on)
td(on)
10 0.01
2
3
5
7
0.1
2 IT00038
10 --0.01
2
3
5
7
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
[Nch]
100
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
--0.1 IT00086
[Pch] f=1MHz
f=1MHz
7 5
Ciss, Coss, Crss -- pF
2
Ciss, Coss, Crss -- pF
3
3 2
10 7 5 3 2
10 7 5 3
Ciss Coss
Ciss Coss
Crss
2 1.0
Crss
0 --5 --10 --15 --20 --25 --30 IT00087
1.0 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
10 9
IT00039
VGS -- Qg
VDS=10V ID=150mA
Drain-to-Source Voltage, VDS -- V
--10 --9
[Nch]
VGS -- Qg
[Pch]
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --100mA
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
Total Gate Charge, Qg -- nC
IT00088
No.6920-5/6
MCH6613
ASO
3 2 1.0
[Nch] 100s
1m s
--1.0 7 5
ASO
IDP= --0.8A
10
1m s
[Pch] 100s
IDP=1.4A
Drain Current, ID -- A
Drain Current, ID -- A
7 5 3 2 0.1 7 5 3 2 0.01
3 2
ms
ID=0.35A
10m
s
ID= --0.2A
DC
10
op
0m
DC
Operation in this area is limited by RDS(on).
100
ope rat
s
n
ms
--0.1 7 5 3 2
era
ion
tio
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 --10 2 3 5 IT02878
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 10 2 3 5 IT02877 Drain-to-Source Voltage, VDS -- V PD -- Ta [Pch, Nch]
1.0
--0.01 --1.0
Drain-to-Source Voltage, VDS -- V
1.0
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
ard
0.4
(90
0m
m2 !0
.8m
0.2
m)
1u
nit
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT02879
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS No.6920-6/6


▲Up To Search▲   

 
Price & Availability of MCH6613

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X